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Operation and Modeling of the MOS Transistor (4th ed.) by Yannis Tsividis, Colin McAndrew

Operation and Modeling of the MOS Transistor (4th ed.) Yannis Tsividis, Colin McAndrew ebook
Publisher: Oxford University Press, USA
Format: pdf
ISBN: 0195170156, 9780195170153
Page: 752

Arises since Maxwell's equations involve vector differential or integral operations on vec -. Operation and Modeling of the MOS transistor. Oxford University Press John Wiley and Sons, New York, 4th edition, 2001. Operation and Modeling of the MOS Transistor. Metal Oxide Semiconductor Field Effect Transistor 546 . A 4th edition has just been released. Yannis Tsividis, Operation and Modeling of the MOS Transistor, 2nd edition,. Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Four Terminal MOS Transistor: Transistor regions of operation, general charge sheet models, inversion, interpolation models, effective mobility, temperature effects, breakdown p-channel. The International Technology Roadmap for Semiconductors (2004 edition), 2004. Includes inductive degeneration for nMOS amplifiers, and differential FET and Gilbert cell mix- .. Upper Saddle River, NJ: Prentice Hall, 1995. Electronic Communications, 4th ed. Haykin, Communication Systems, 4th Ed, John Wiley & Sons, New York, 2001. McAndrew, "Operation and Modeling of the MOS Transistor", 3d Edition, Oxford University Press, 2011. Operation and Modeling of the MOS Transistor: Special MOOC Edition (Oxford Series in Electrical and Computer Engineering).